Invention Grant
US06815764B2 Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same
失效
具有两片门和自对准ONO的本地SONOS型结构及其制造方法
- Patent Title: Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same
- Patent Title (中): 具有两片门和自对准ONO的本地SONOS型结构及其制造方法
-
Application No.: US10388631Application Date: 2003-03-17
-
Publication No.: US06815764B2Publication Date: 2004-11-09
- Inventor: Geum-Jong Bae , Nae-In Lee , Sang Su Kim , Ki Chul Kim , Jin-Hee Kim , In-Wook Cho , Sung-Ho Kim , Kwang-Wook Koh
- Applicant: Geum-Jong Bae , Nae-In Lee , Sang Su Kim , Ki Chul Kim , Jin-Hee Kim , In-Wook Cho , Sung-Ho Kim , Kwang-Wook Koh
- Main IPC: H01L29792
- IPC: H01L29792

Abstract:
A local SONOS structure having a two-piece gate and a self-aligned ONO structure includes: a substrate; an ONO structure on the substrate; a first gate layer on and aligned with the ONO structure; a gate insulator on the substrate aside the ONO structure; and a second gate layer on the first gate layer and on the gate insulator. The first and second gate layers are electrically connected together. Together, the ONO structure and first and second gate layers define at least a 1-bit local SONOS structure. A corresponding method of manufacture includes: providing a substrate; forming an ONO structure on the substrate; forming a first gate layer on and aligned with the ONO structure; forming a gate insulator on the substrate aside the ONO structure; forming a second gate layer on the first gate layer and on the gate insulator; and electrically connecting the first and second gate layers.
Public/Granted literature
Information query