A semiconductor component includes a semiconductor substrate (210) having a first conductivity type, a semiconductor epitaxial layer (220) having the first conductivity type located over the semiconductor substrate, a first semiconductor device (110) and a second semiconductor device (130) located in the semiconductor epitaxial layer and including, respectively, a first semiconductor region (120) and a second semiconductor region (140), both having the second conductivity type, an ohmic contact region (150) in the semiconductor epitaxial layer having the first conductivity type and located between the first and second semiconductor devices, and at least one electrically insulating trench (160, 360) located in the semiconductor epitaxial layer and circumscribing at least the first semiconductor device. The semiconductor epitaxial layer has a doping concentration lower than a doping concentration of the semiconductor substrate.