发明授权
- 专利标题： Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
- 专利标题（中）： 在硅/硅锗外延层中引入碳以提高Si-Ge双极技术的产量
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申请号： US10122857申请日： 2002-04-15
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公开(公告)号： US06815802B2公开(公告)日： 2004-11-09
- 发明人: Jack Oon Chu , Douglass Duane Coolbaugh , James Stuart Dunn , David R. Greenberg , David L. Harame , Basanth Jagannathan , Robb Allen Johnson , Louis D. Lanzerotti , Kathryn Turner Schonenberg , Ryan Wayne Wuthrich
- 申请人： Jack Oon Chu , Douglass Duane Coolbaugh , James Stuart Dunn , David R. Greenberg , David L. Harame , Basanth Jagannathan , Robb Allen Johnson , Louis D. Lanzerotti , Kathryn Turner Schonenberg , Ryan Wayne Wuthrich
- 主分类号： H01L27082
- IPC分类号： H01L27082
摘要：
A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
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