发明授权
- 专利标题: Bi-directional read write data structure and method for memory
- 专利标题(中): 双向读写数据结构和存储方法
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申请号: US10448776申请日: 2003-05-29
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公开(公告)号: US06816397B1公开(公告)日: 2004-11-09
- 发明人: John W. Golz , David R. Hanson , Hoki Kim
- 申请人: John W. Golz , David R. Hanson , Hoki Kim
- 主分类号: G11C502
- IPC分类号: G11C502
摘要:
As disclosed herein, an integrated circuit memory is provided which includes primary sense amplifiers coupled for access to a multiplicity of storage cells, second sense amplifiers, and pairs of input/output data lines (IODLs), each IODL pair being coupled to a primary sense amplifier, and each IODL pair carrying complementary signals representing a storage bit. The memory further includes pairs of bi-directional primary data lines (BPDLs), each BPDL pair being coupled to a second sense amplifier and each BPDL pair being adapted to carry other complementary signals representing a storage bit. Local buffers are adapted to transfer, in accordance with control input, the complementary signals carried by the IODLs to the BPDLs, and vice versa.
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