发明授权
US06816422B2 Semiconductor memory device having multi-bit testing function 失效
具有多位测试功能的半导体存储器件

  • 专利标题: Semiconductor memory device having multi-bit testing function
  • 专利标题(中): 具有多位测试功能的半导体存储器件
  • 申请号: US10291776
    申请日: 2002-11-12
  • 公开(公告)号: US06816422B2
    公开(公告)日: 2004-11-09
  • 发明人: Kei HamadeTakashi KonoKiyohiro Furutani
  • 申请人: Kei HamadeTakashi KonoKiyohiro Furutani
  • 优先权: JP2002-137083 20020513
  • 主分类号: G11C700
  • IPC分类号: G11C700
Semiconductor memory device having multi-bit testing function
摘要:
In a multi-bit test, an I/O combiner degenerates data of a plurality of bits read from a memory cell array to first to fourth data bus pairs in parallel and outputs the degenerated data to a fifth data bus. A read amplifier compares a logic level of the degenerated data received from the I/O combiner with a logic level of expected value data. If the logic level of the degenerated data coincides with the logic level of the expected value data, the read amplifier determines that data write and read to and from the plurality of bits have been normally performed. As a result, a semiconductor memory device can detect a word line defect in the multi-bit test.
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