发明授权
US06818385B2 Phase shifting circuit manufacture method and apparatus 有权
相移电路制造方法及装置

  • 专利标题: Phase shifting circuit manufacture method and apparatus
  • 专利标题(中): 相移电路制造方法及装置
  • 申请号: US10341290
    申请日: 2003-01-13
  • 公开(公告)号: US06818385B2
    公开(公告)日: 2004-11-16
  • 发明人: Yao-Ting WangYagyensh C. Pati
  • 申请人: Yao-Ting WangYagyensh C. Pati
  • 主分类号: G03F900
  • IPC分类号: G03F900
Phase shifting circuit manufacture method and apparatus
摘要:
A method for manufacturing integrated circuits using opaque field, phase shift masking. One embodiment of the invention includes using a two mask process. The first mask is an opaque-field phase shift mask and the second mask is a single phase structure mask. A phase shift window is aligned with the opaque field using a phase shift overlap area on the opaque field. The phase shift mask primarily defines regions requiring phase shifting. The single phase structure mask primarily defines regions not requiring phase shifting. The single phase structure mask also prevents the erasure of the phase shifting regions and prevents the creation of undesirable artifact regions that would otherwise be created by the phase shift mask.
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