发明授权
- 专利标题: Phase shifting circuit manufacture method and apparatus
- 专利标题(中): 相移电路制造方法及装置
-
申请号: US10341290申请日: 2003-01-13
-
公开(公告)号: US06818385B2公开(公告)日: 2004-11-16
- 发明人: Yao-Ting Wang , Yagyensh C. Pati
- 申请人: Yao-Ting Wang , Yagyensh C. Pati
- 主分类号: G03F900
- IPC分类号: G03F900
摘要:
A method for manufacturing integrated circuits using opaque field, phase shift masking. One embodiment of the invention includes using a two mask process. The first mask is an opaque-field phase shift mask and the second mask is a single phase structure mask. A phase shift window is aligned with the opaque field using a phase shift overlap area on the opaque field. The phase shift mask primarily defines regions requiring phase shifting. The single phase structure mask primarily defines regions not requiring phase shifting. The single phase structure mask also prevents the erasure of the phase shifting regions and prevents the creation of undesirable artifact regions that would otherwise be created by the phase shift mask.
公开/授权文献
- US20030165754A1 Phase shifting circuit manufacture method and apparatus 公开/授权日:2003-09-04