发明授权
- 专利标题： Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus
- 专利标题（中）： 半导体装置及其制造方法以及半导体制造装置
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申请号： US10293753申请日： 2002-11-13
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公开(公告)号： US06821343B2公开(公告)日： 2004-11-23
- 发明人: Akito Hara , Fumiyo Takeuchi , Kenichi Yoshino , Nobuo Sasaki
- 申请人： Akito Hara , Fumiyo Takeuchi , Kenichi Yoshino , Nobuo Sasaki
- 优先权： JP2000-255646 20000825; JP2001-202730 20010703
- 主分类号： C30B3500
- IPC分类号： C30B3500
摘要：
A semiconductor manufacturing apparatus emits an energy beam for crystallizing a semiconductor film formed on a substrate. The apparatus can output a plurality of energy beams continuously in relation to time and move the energy beams to scan a target to be irradiated. The output instability of the energy beam is smaller than ±1%/h. The noise (optical noise) indicating the instability of the energy beam can be not more than 0.1 rms %.
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