发明授权
- 专利标题: Plasma processing apparatus
- 专利标题(中): 等离子体处理装置
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申请号: US10384520申请日: 2003-03-11
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公开(公告)号: US06821377B2公开(公告)日: 2004-11-23
- 发明人: Susumu Saito , Norikazu Sugiyama
- 申请人: Susumu Saito , Norikazu Sugiyama
- 优先权: JP10-260865 19980831
- 主分类号: H05H100
- IPC分类号: H05H100
摘要:
A plasma etching apparatus for a semiconductor wafer generates plasma in a plasma generation space between a susceptor and a showerhead. A shield member is detachably disposed inside the sidewall of a process chamber to prevent reaction products from sticking to the sidewall. A window device is arranged to lead plasma light emitted from plasma out of the process chamber. The window device includes a quartz window plate airtightly attached to the sidewall of the process chamber. The window device also includes an aluminum light guide having a number of capillary through holes for guiding the plasma light to the window plate, and a sapphire cover plate disposed between the window plate and the light guide and covering the openings of the through holes. The light guide and the cover plate are attached to the shield member.
公开/授权文献
- US20030173029A1 Plasma processing apparatus 公开/授权日:2003-09-18
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