发明授权
- 专利标题： Method of manufacturing a semiconductor integrated circuit device
- 专利标题（中）： 制造半导体集成电路器件的方法
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申请号： US10211262申请日： 2002-08-05
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公开(公告)号： US06821854B2公开(公告)日： 2004-11-23
- 发明人: Takayuki Kanda , Atsushi Hiraiwa , Norio Suzuki , Satoshi Sakai , Shuji Ikeda , Yasuko Yoshida , Shinichi Horibe
- 申请人： Takayuki Kanda , Atsushi Hiraiwa , Norio Suzuki , Satoshi Sakai , Shuji Ikeda , Yasuko Yoshida , Shinichi Horibe
- 优先权： JP11-117815 19990426; JP11-225991 19990810
- 主分类号： H01L218234
- IPC分类号： H01L218234
摘要：
A protection film is formed on a silicon oxide film 6 formed on the surface of a semiconductor substrate, a silicon oxide film is removed from a region where a thin gate-insulating film is to be formed by using, as a mask, a photoresist pattern that covers a region where a thick gate-insulating film is to be formed, and, then, the photoresist pattern is removed followed by washing. Then, the semiconductor substrate is heat-oxidized or a film is deposited thereon to form gate-insulating films having different thicknesses.
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