发明授权
- 专利标题： Anneal sequence for high-&kgr; film property optimization
- 专利标题（中）： 用于高Kappa膜性质优化的退火序列
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申请号： US10185326申请日： 2002-06-28
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公开(公告)号： US06821873B2公开(公告)日： 2004-11-23
- 发明人: Mark R. Visokay , Luigi Colombo , Antonio L. P. Rotondaro
- 申请人： Mark R. Visokay , Luigi Colombo , Antonio L. P. Rotondaro
- 主分类号： H01L213105
- IPC分类号： H01L213105
摘要：
A method for improving high-&kgr; gate dielectric film (104) properties. The high-&kgr; film (104) is subjected to a two step anneal sequence. The first anneal is a high temperature anneal in a non-oxidizing ambient (106) such as N2 to densify the high-&kgr; film (104). The second anneal is a lower temperature anneal in an oxidizing ambient (108) to perform a mild oxidation that heals the high-&kgr; film and reduces interface defects.
公开/授权文献
- US20030129817A1 Anneal sequence for high-k film property optimization 公开/授权日：2003-07-10
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