发明授权
US06821880B1 Process of dual or single damascene utilizing separate etching and DCM apparati
失效
使用单独蚀刻和DCM装置的双或单镶嵌工艺
- 专利标题： Process of dual or single damascene utilizing separate etching and DCM apparati
- 专利标题（中）： 使用单独蚀刻和DCM装置的双或单镶嵌工艺
-
申请号： US10725138申请日： 2003-12-01
-
公开(公告)号： US06821880B1公开(公告)日： 2004-11-23
- 发明人: Hun-Jan Tao , Chao-Cheng Chen
- 申请人： Hun-Jan Tao , Chao-Cheng Chen
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
A process of dual damascene or damascene. The dual damascene process entails providing an etching apparatus, a DCM machine and a wafer, the wafer having a metal line, a stop layer, a dielectric layer, a contact, and a photoresist layer. The dielectric layer and the contact are etched in the etching apparatus to form a trench. The photoresist and the contact are ashed in the DCM machine. Finally the wafer is wet cleaned.
信息查询
