发明授权
US06824958B2 Method of manufacturing photomask and method of manufacturing semiconductor integrated circuit device 失效
制造光掩模的方法和制造半导体集成电路器件的方法

  • 专利标题: Method of manufacturing photomask and method of manufacturing semiconductor integrated circuit device
  • 专利标题(中): 制造光掩模的方法和制造半导体集成电路器件的方法
  • 申请号: US10025457
    申请日: 2001-12-26
  • 公开(公告)号: US06824958B2
    公开(公告)日: 2004-11-30
  • 发明人: Katsuya HayanoNorio Hasegawa
  • 申请人: Katsuya HayanoNorio Hasegawa
  • 优先权: JP2000-395447 20001226
  • 主分类号: G03C500
  • IPC分类号: G03C500
Method of manufacturing photomask and method of manufacturing semiconductor integrated circuit device
摘要:
Disclosed is a technique capable of reducing the manufacturing time of a photomask. In a method of transferring a predetermined pattern onto a semiconductor wafer by reduced projection exposure using a product mask manufactured by performing the reduced projection exposure to a pattern of an IP mask Mm1, the IP mask Mm1 is designed to have a resist mask structure in which a light-shielding pattern thereof is constituted of an organic film such as a resist film.
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