发明授权
US06825087B1 Hydrogen anneal for creating an enhanced trench for trench MOSFETS
有权
用于产生用于沟槽MOSFET的增强沟槽的氢退火
- 专利标题： Hydrogen anneal for creating an enhanced trench for trench MOSFETS
- 专利标题（中）： 用于产生用于沟槽MOSFET的增强沟槽的氢退火
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申请号： US09448884申请日： 1999-11-24
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公开(公告)号： US06825087B1公开(公告)日： 2004-11-30
- 发明人: Joelle Sharp , Gordon K. Madson
- 申请人： Joelle Sharp , Gordon K. Madson
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
A method of forming a trench in a substrate or in an epitaxial layer, previously grown over the semiconductor substrate, wherein an anneal step, using hydrogen gas results in rounded corners without the need for a rounding etch or any other processing steps to round the corners.
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