发明授权
US06825114B1 Selective stress-inducing implant and resulting pattern distortion in amorphous carbon patterning 失效
选择性应力诱导植入物和无定形碳图案化导致的图案变形

Selective stress-inducing implant and resulting pattern distortion in amorphous carbon patterning
摘要:
A method of forming a fuse for use in an integrated circuit using an amorphous carbon mask includes providing a mask material layer comprising amorphous carbon over a conductive layer. The mask material layer is doped with nitrogen, and an anti-reflective coating (ARC) feature is formed over the mask layer. A portion of the mask material layer is removed according to the ARC feature to form a mask, and the ARC feature is removed to form a warped mask. The conductive layer is patterned according to the warped mask, the warped mask is removed, and a silicide layer is provided over the patterned conductive layer.
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