• 专利标题: CMOS imager and method of formation
  • 申请号: US10342313
    申请日: 2003-01-15
  • 公开(公告)号: US06825516B2
    公开(公告)日: 2004-11-30
  • 发明人: Howard E. Rhodes
  • 申请人: Howard E. Rhodes
  • 主分类号: H01L31062
  • IPC分类号: H01L31062
CMOS imager and method of formation
摘要:
A CMOS imager having an epitaxial layer formed below pixel sensor cells is disclosed. An epitaxial layer is formed between a semiconductor substrate and a photosensitive region to improve the cross-talk between pixel cells. The thickness of the epitaxial layer is optimized so that the collection of signal carriers by the photosensitive region is maximized.
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