- 专利标题: CMOS imager and method of formation
-
申请号: US10342313申请日: 2003-01-15
-
公开(公告)号: US06825516B2公开(公告)日: 2004-11-30
- 发明人: Howard E. Rhodes
- 申请人: Howard E. Rhodes
- 主分类号: H01L31062
- IPC分类号: H01L31062
摘要:
A CMOS imager having an epitaxial layer formed below pixel sensor cells is disclosed. An epitaxial layer is formed between a semiconductor substrate and a photosensitive region to improve the cross-talk between pixel cells. The thickness of the epitaxial layer is optimized so that the collection of signal carriers by the photosensitive region is maximized.
公开/授权文献
- US20030138990A1 CMOS imager and method of formation 公开/授权日:2003-07-24