发明授权
US06826022B2 CPP type magnetic sensor or magnetic sensor using tunnel effect, and manufacturing method therefor
失效
CPP型磁传感器或使用隧道效应的磁传感器及其制造方法
- 专利标题： CPP type magnetic sensor or magnetic sensor using tunnel effect, and manufacturing method therefor
- 专利标题（中）： CPP型磁传感器或使用隧道效应的磁传感器及其制造方法
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申请号： US10215693申请日： 2002-08-09
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公开(公告)号： US06826022B2公开(公告)日： 2004-11-30
- 发明人: Eiji Umetsu
- 申请人： Eiji Umetsu
- 优先权： JP2001-245108 20010813; JP2001-248690 20010820
- 主分类号： G11B5127
- IPC分类号： G11B5127
摘要：
By forming insulating layers on two sides of a laminate, forming a free magnetic layer continuously on the laminate and the insulating layers, and placing the free magnetic layer in a single magnetic domain by an exchange bias method, reproducing output and changing rate of resistance of a CPP type magnetic sensor can be improved even when recording density is increased in the future.
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