A fuse structure (30) formed in a semiconductor device is provided. The fuse structure (30) includes a layer of fuse material (32), a first contact (40), and a second contact (42). The first contact (40) has a first edge (54). At least a portion of the first edge (54) abuts the fuse material layer (32). The second contact (42) has a second edge (55). At least a portion of the second edge (55) abuts the fuse material layer (32). The first edge (54) faces the second edge (55). The first edge (54) is separated from the second edge (55) by a spaced distance (58). A conductive portion of the fuse material layer (32) electrically connects between the first edge (54) and the second edge (55) within the spaced distance (58). The abutting portion of the first edge (54) has a first length. The abutting portion of the second edge (55) has a second length. The first length is greater than the second length.