发明授权
- 专利标题: Uneven pattern sensing device
- 专利标题(中): 不均匀图案感测装置
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申请号: US10087998申请日: 2002-03-05
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公开(公告)号: US06828805B2公开(公告)日: 2004-12-07
- 发明人: Yoshihiro Izumi , Osamu Teranuma
- 申请人: Yoshihiro Izumi , Osamu Teranuma
- 优先权: JP2001-063983 20010307; JP2002-050071 20020226
- 主分类号: G01R2726
- IPC分类号: G01R2726
摘要:
What are formed on an insulating substrate are gate electrodes and data electrodes provided in a grid pattern, a TFT provided in each grid and connected to the gate electrode and the data electrode, an interlayer insulating film formed on the TFT and including a contact hole penetrating the film itself, and a sense electrode provided on the interlayer insulating film and passing through the contact hole. On the interlayer insulating film, an upper layer insulating film is formed so as to cover the sense electrode. A surface of the interlayer insulating film in which surface the sense electrode is formed is flat. On this account, it is possible to provide an uneven pattern sensing device capable of smoothing out a surface thereof without any increase of the manufacturing process and limitation of a choice of materials for a protective film.
公开/授权文献
- US20020125437A1 Uneven pattern sensing device 公开/授权日:2002-09-12
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