发明授权
- 专利标题： Magnetic memory device and manufacturing method thereof
- 专利标题（中）： 磁存储器件及其制造方法
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申请号： US10316911申请日： 2002-12-12
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公开(公告)号： US06829162B2公开(公告)日： 2004-12-07
- 发明人: Keiji Hosotani
- 申请人： Keiji Hosotani
- 优先权： JP2001-380321 20011213
- 主分类号： G11C1115
- IPC分类号： G11C1115
摘要：
A magnetic memory device includes magneto resistive elements which are laminated in each cell with easy axes of magnetization set in different directions, each magneto resistive elements having at least two resistance values, and first and second wirings which sandwich the magneto resistive elements and are arranged to extend in different directions from each other.
公开/授权文献
- US20030112655A1 Magnetic memory device and manufacturing method thereof 公开/授权日：2003-06-19
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