发明授权
US06829270B2 Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor device
有权
氮化物III-V化合物半导体衬底，其制造方法，半导体发光器件的制造方法以及半导体器件的制造方法
- 专利标题： Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor device
- 专利标题（中）： 氮化物III-V化合物半导体衬底，其制造方法，半导体发光器件的制造方法以及半导体器件的制造方法
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申请号： US10228181申请日： 2002-08-27
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公开(公告)号： US06829270B2公开(公告)日： 2004-12-07
- 发明人: Yasuhiko Suzuki , Takeharu Asano , Motonobu Takeya , Osamu Goto , Shinro Ikeda , Katsuyoshi Shibuya
- 申请人： Yasuhiko Suzuki , Takeharu Asano , Motonobu Takeya , Osamu Goto , Shinro Ikeda , Katsuyoshi Shibuya
- 优先权： JPP2001-257606 20010828
- 主分类号： H01S500
- IPC分类号： H01S500
摘要：
When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0
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