Invention Grant
- Patent Title: Pressure sensor
- Patent Title (中): 压力传感器
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Application No.: US10606893Application Date: 2003-06-27
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Publication No.: US06829942B2Publication Date: 2004-12-14
- Inventor: Kenichi Yanai , Hiroto Nakatani , Tomoyasu Watanabe
- Applicant: Kenichi Yanai , Hiroto Nakatani , Tomoyasu Watanabe
- Priority: JP2002-187902 20020627
- Main IPC: G01L900
- IPC: G01L900

Abstract:
A pressure sensor includes a pair of base films, a pair of electrodes, a layer of pressure-sensitive resistor, a spacer, and a projection. The electrodes are located between the base films. The layer of pressure-sensitive resistor is located between the base films to be distant from one of the electrodes by a predetermined gap. The spacer is located outside the layer of pressure-sensitive resistor between the base films and used for forming the gap. The projection is located on an outer surface of one of the base films in order to decrease the lowest pressure that can be detected by the pressure sensor. The contact state between the layer of pressure-sensitive resistor and one of the electrodes varies to vary the resistance between the electrodes when a pressure acts on the projection.
Public/Granted literature
- US20040000195A1 Pressure sensor Public/Granted day:2004-01-01
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