Invention Grant
US06831264B2 CMOS photodetector including an amorphous silicon photodiode and a saturation system 有权
CMOS光电探测器包括非晶硅光电二极管和饱和系统

  • Patent Title: CMOS photodetector including an amorphous silicon photodiode and a saturation system
  • Patent Title (中): CMOS光电探测器包括非晶硅光电二极管和饱和系统
  • Application No.: US10142262
    Application Date: 2002-05-08
  • Publication No.: US06831264B2
    Publication Date: 2004-12-14
  • Inventor: Yvon Cazaux
  • Applicant: Yvon Cazaux
  • Priority: FR0106131 20010509
  • Main IPC: H01L3100
  • IPC: H01L3100
CMOS photodetector including an amorphous silicon photodiode and a saturation system
Abstract:
A photodetector including an amorphous silicon photodiode having its anode connected to a reference voltage, an initialization MOS transistor connected between the cathode of the photodiode and a first supply voltage to set the cathode to the first supply voltage during an initialization phase, and means for measuring the voltage of the photodiode cathode, including saturation means for bringing the photodiode cathode to a saturation voltage close to the reference voltage immediately before the initialization phase.
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