发明授权
US06831369B2 Semiconductor structure having in-situ formed unit resistors and method for fabrication
有权
具有原位形成单元电阻器的半导体结构和制造方法
- 专利标题: Semiconductor structure having in-situ formed unit resistors and method for fabrication
- 专利标题(中): 具有原位形成单元电阻器的半导体结构和制造方法
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申请号: US10705115申请日: 2003-11-10
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公开(公告)号: US06831369B2公开(公告)日: 2004-12-14
- 发明人: Cyril Cabral, Jr. , Lawrence Clevenger , Louis Lu-Chen Hsu , Keith Kwong Hon Wong
- 申请人: Cyril Cabral, Jr. , Lawrence Clevenger , Louis Lu-Chen Hsu , Keith Kwong Hon Wong
- 主分类号: H01L2348
- IPC分类号: H01L2348
摘要:
An electronic structure that has in-situ formed unit resistors and a method for fabricating such structure are disclosed. The electronic structure that has in-situ formed unit resistors consists of a first plurality of conductive elements formed in an insulating material layer, a plurality of electrically resistive vias formed on top and in electrical communication with at least one of the first plurality of conductive elements, and a second plurality of conductive elements formed on top of and in electrical communication with at least one of the plurality of electrically resistive vias. The present invention novel structure may further be formed in a multi-level configuration such that multi-level resistors may be connected in-series to provide larger resistance values. The present invention novel structure may further be combined with a capacitor network to form desirable RC circuits.