发明授权
US06831859B2 Non-volatile semiconductor memory for storing initially-setting data
有权
用于存储初始设置数据的非易失性半导体存储器
- 专利标题: Non-volatile semiconductor memory for storing initially-setting data
- 专利标题(中): 用于存储初始设置数据的非易失性半导体存储器
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申请号: US10703503申请日: 2003-11-10
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公开(公告)号: US06831859B2公开(公告)日: 2004-12-14
- 发明人: Koji Hosono , Toshihiko Himeno , Kenichi Imamiya , Hiroshi Nakamura
- 申请人: Koji Hosono , Toshihiko Himeno , Kenichi Imamiya , Hiroshi Nakamura
- 优先权: JP11-351396 19991210; JP2000-330971 20001030
- 主分类号: G11C1606
- IPC分类号: G11C1606
摘要:
A non-volatile semiconductor memory includes a memory cell array having a plurality of electrically-rewritable non-volatile memory cells. The memory cell array is provided with an initially-setting data area, programmed in which is initially-setting data for deciding memory operation requirements. The non-volatile semiconductor memory also includes an initial-set data latch. The initially-setting data of the memory cell array is read out and transferred to the data latch in an initially-setting operation.
公开/授权文献
- US20040080976A1 Non-volatile semiconductor memory 公开/授权日:2004-04-29
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