发明授权
- 专利标题： Trench power semiconductor
- 专利标题（中）： 沟槽功率半导体
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申请号： US10165912申请日： 2002-06-10
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公开(公告)号： US06833584B2公开(公告)日： 2004-12-21
- 发明人: Ralf Henninger , Franz Hirler , Manfred Kotek , Joost Larik , Markus Zundel
- 申请人： Ralf Henninger , Franz Hirler , Manfred Kotek , Joost Larik , Markus Zundel
- 优先权： DE10127885 20010608
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
A trench power semiconductor component is described which has an edge cell in which an edge trench is provided. The edge trench, at least on an outer side wall, has a thicker insulating layer than an insulating layer of trenches of the cell array. This simple configuration provides a high dielectric strength and is economical to produce.
公开/授权文献
- US20020185680A1 Trench power semiconductor component 公开/授权日：2002-12-12
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