Method of making a memory cell capacitor with Ta2O5 dielectric

Invention Grant

US06833605B2 Method of making a memory cell capacitor with Ta2O5 dielectric 失效

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Patent Title: Method of making a memory cell capacitor with Ta2O5 dielectric
Application No.: US10642641

Application Date: 2003-08-19
Publication No.: US06833605B2

Publication Date: 2004-12-21
Inventor: Weimin Li
Applicant: Weimin Li
Main IPC: H01L2972
IPC: H01L2972

Method of making a memory cell capacitor with Ta2O5 dielectric

Abstract:

The present invention provides a method for making an integrated circuit capacitor having a Ta2O5 dielectric which includes a high-temperature nitrogen anneal and a low-temperature ozone anneal of the dielectric.

Public/Granted literature

US20040051132A1 Method of making a memory cell capacitor with Ta2O5 dielectric Public/Granted day:2004-03-18

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