A semiconductor device having self-aligned contact pads and a method for manufacturing the same are provided. The semiconductor device includes a semiconductor substrate and an isolation layer formed on the semiconductor substrate. The semiconductor substrate defines a plurality of active regions that each have a major axis and a minor axis. A plurality of gates are formed to cross the plurality of active regions and extend in the direction of the minor axis. First and second source/drain regions are formed in active regions at either side of each of the gates. First and second self-aligned contact pads (SACs) are formed to contact the top surfaces of the first and second source/drain regions, respectively.