发明授权
US06836431B2 Method of programming/reading multi-level flash memory using sensing circuit 有权
使用感应电路编程/读取多级闪存的方法

  • 专利标题: Method of programming/reading multi-level flash memory using sensing circuit
  • 专利标题(中): 使用感应电路编程/读取多级闪存的方法
  • 申请号: US10006096
    申请日: 2001-12-10
  • 公开(公告)号: US06836431B2
    公开(公告)日: 2004-12-28
  • 发明人: Seung Ho Chang
  • 申请人: Seung Ho Chang
  • 优先权: KR2001-38430 20010629
  • 主分类号: G11C1604
  • IPC分类号: G11C1604
Method of programming/reading multi-level flash memory using sensing circuit
摘要:
A method of programming a multi-level flash memory using a sensing circuit according to the present invention performs an automatic verification program method of performing verification while performing a program. The method can reduce the power consumption by detecting a program data stored at a register to stop an operation of the sensing circuit for memory cells for which the program is completed. Also, a method of reading the flash memory senses the state of the threshold voltage of a cell using the sense amplifier used in the program operation while increasing or lowering the voltage applied to a control gate step-by-step and then stores the level value generated in a counter at the registers depending on its state, wherein an operation of the sensing circuit for the memory cells for which the program is completed is stopped. Therefore, the present invention can reduce the power consumption and allow a multi-level read to be implemented on an actual array with a simple sense amplifier structure step-by-step. In addition, the present invention can reduce the power consumption while simplifying the circuit construction by allowing a program/read operation to be simultaneously implemented on a single sense amplifier circuit.
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