发明授权
US06845050B2 Signal delay control circuit in a semiconductor memory device 有权
半导体存储器件中的信号延迟控制电路

Signal delay control circuit in a semiconductor memory device
摘要:
A signal delay control circuit for use in a semiconductor memory device is disclosed. The circuit includes a first reference voltage generating unit for generating a first reference voltage; a second reference voltage generating unit for generating a second reference voltage that is lower than the first reference voltage; a control signal generating unit for generating a clock signal to drive input and output operations of internal circuits; and an impedance circuit in circuit with the first and second reference voltage generating units for generating a plurality of reference voltages to be applied to the internal circuits wherein the reference voltages are set in accordance with a distance between the control signal generating unit and the respective one of the internal circuits.
信息查询
0/0