发明授权
- 专利标题: Signal delay control circuit in a semiconductor memory device
- 专利标题(中): 半导体存储器件中的信号延迟控制电路
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申请号: US10755732申请日: 2004-01-12
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公开(公告)号: US06845050B2公开(公告)日: 2005-01-18
- 发明人: Jae Jin Lee
- 申请人: Jae Jin Lee
- 申请人地址: KR Kyunki-Do
- 专利权人: Hynix Semiconductor Inc
- 当前专利权人: Hynix Semiconductor Inc
- 当前专利权人地址: KR Kyunki-Do
- 代理机构: Marshall, Gerstein & Borun LLP
- 优先权: KR2001-38019 20010629
- 主分类号: G11C11/407
- IPC分类号: G11C11/407 ; G11C5/14 ; G11C7/00 ; G11C7/06 ; G11C7/10 ; G11C7/22 ; G11C11/408 ; G11C11/409 ; G11C11/00
摘要:
A signal delay control circuit for use in a semiconductor memory device is disclosed. The circuit includes a first reference voltage generating unit for generating a first reference voltage; a second reference voltage generating unit for generating a second reference voltage that is lower than the first reference voltage; a control signal generating unit for generating a clock signal to drive input and output operations of internal circuits; and an impedance circuit in circuit with the first and second reference voltage generating units for generating a plurality of reference voltages to be applied to the internal circuits wherein the reference voltages are set in accordance with a distance between the control signal generating unit and the respective one of the internal circuits.
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