发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US10413306申请日： 2003-04-15
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公开(公告)号： US06847063B2公开(公告)日： 2005-01-25
- 发明人: Teruhito Ohnishi , Koichiro Yuki , Shigeki Sawada , Keiichiro Shimizu , Koichi Hasegawa , Tohru Saitoh , Paul A. Clifton
- 申请人： Teruhito Ohnishi , Koichiro Yuki , Shigeki Sawada , Keiichiro Shimizu , Koichi Hasegawa , Tohru Saitoh , Paul A. Clifton
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2002-292665 20021004
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L29/10 ; H01L29/737 ; H01L31/0328 ; H01L29/00
摘要：
In a semiconductor device acting as an HBT, an emitter/base laminate portion is provided on a Si epitaxially grown layer in the SiGeC-HBT. The emitter/base laminate portion includes a SiGeC spacer layer, a SiGeC core base layer containing the boron, a Si cap layer, and an emitter layer formed by introducing phosphorous into the Si cap layer. The C content of the SiGeC spacer layer is equal to or lower than that of the SiGeC core base layer.
公开/授权文献
- US20040065878A1 Semiconductor device 公开/授权日：2004-04-08
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