发明授权
- 专利标题: Method of fabricating a dual damascene copper wire
- 专利标题(中): 制造双镶嵌铜线的方法
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申请号: US10707517申请日: 2003-12-19
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公开(公告)号: US06849541B1公开(公告)日: 2005-02-01
- 发明人: Shao-Chung Hu , Yu-Ru Yang , Chien-Chung Huang , Tzung-Yu Hung
- 申请人: Shao-Chung Hu , Yu-Ru Yang , Chien-Chung Huang , Tzung-Yu Hung
- 申请人地址: TW Hsin-Chu
- 专利权人: United Microelectronics Corp.
- 当前专利权人: United Microelectronics Corp.
- 当前专利权人地址: TW Hsin-Chu
- 代理商 Winston Hsu
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L21/4763 ; H01L21/44
摘要:
A method of forming at least one wire on a substrate. The substrate includes at least one conductive region. An insulating layer is disposed on the substrate. At least one recess in the insulating layer exposes the conductive region. A barrier layer is formed on a surface of the insulating layer and the recess first. A continuous and uniform conductive layer is then formed on a surface of the barrier layer. A seed layer is thereafter formed on a surface of the conductive layer. Finally, a metal layer filling up the recess is formed on a surface of the seed layer.
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