发明授权
US06849541B1 Method of fabricating a dual damascene copper wire 有权
制造双镶嵌铜线的方法

Method of fabricating a dual damascene copper wire
摘要:
A method of forming at least one wire on a substrate. The substrate includes at least one conductive region. An insulating layer is disposed on the substrate. At least one recess in the insulating layer exposes the conductive region. A barrier layer is formed on a surface of the insulating layer and the recess first. A continuous and uniform conductive layer is then formed on a surface of the barrier layer. A seed layer is thereafter formed on a surface of the conductive layer. Finally, a metal layer filling up the recess is formed on a surface of the seed layer.
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