发明授权
- 专利标题: Method for producing solid electrolytic capacitor
- 专利标题(中): 固体电解电容器的制造方法
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申请号: US10362227申请日: 2002-06-24
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公开(公告)号: US06855177B2公开(公告)日: 2005-02-15
- 发明人: Tatsuo Fujii , Katsumasa Miki , Makoto Nakano , Suzushi Kimura , Yuji Mido
- 申请人: Tatsuo Fujii , Katsumasa Miki , Makoto Nakano , Suzushi Kimura , Yuji Mido
- 申请人地址: JP
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Parkhurst & Wendel, L.L.P.
- 优先权: JP2001-190965 20010625
- 国际申请: PCTJP02/06304 WO 20020624
- 国际公布: WO0300538 WO 20030116
- 主分类号: H01G9/028
- IPC分类号: H01G9/028 ; H01G9/00 ; H01G9/012 ; H01G9/04 ; H01G9/08 ; H01G9/15 ; H01G4/228
摘要:
A method for manufacturing large capacitance solid electrolytic capacitors that can be connected direct with semiconductor component, and offer a superior high frequency characteristic. An aluminum foil 3 is made porous in one of the surfaces, a dielectric layer 2 is formed on the porous portion, a through hole 4 is provided in the aluminum foil 3 at a certain specific location. An insulation layer 5 is formed to cover the other surface, viz. non-porous surface, of the aluminum foil 3 and the inner wall surface of through hole 4, a solid electrolytic layer 6 is provided on the dielectric layer 2, and a through hole electrode 7 is formed in the through hole 4, and then a collector layer 8 is formed on the solid electrolytic layer 6. The insulation layer 5 disposed on aluminum foil 3 is provided with an opening 9 at a certain specific location, and a connection terminal 10 is provided at the opening 9 of insulation layer 5 and the exposed surface of the through hole electrode 7, respectively.
公开/授权文献
- US20030154583A1 Method for producing solid electrolytic capacitor 公开/授权日:2003-08-21
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