发明授权
US06855376B2 Process of direct growth of carbon nanotubes on a substrate at low temperature
失效
碳纳米管在低温下在基材上直接生长的工艺
- 专利标题: Process of direct growth of carbon nanotubes on a substrate at low temperature
- 专利标题(中): 碳纳米管在低温下在基材上直接生长的工艺
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申请号: US10237695申请日: 2002-09-10
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公开(公告)号: US06855376B2公开(公告)日: 2005-02-15
- 发明人: Chien-Liang Hwang , Jack Ting , Jih-Shun Chiang , Chuan Chuang
- 申请人: Chien-Liang Hwang , Jack Ting , Jih-Shun Chiang , Chuan Chuang
- 申请人地址: TW Chutung
- 专利权人: Industrial Technology Research Institute
- 当前专利权人: Industrial Technology Research Institute
- 当前专利权人地址: TW Chutung
- 代理机构: Bacon & Thomas
- 优先权: TW91105805A 20020325
- 主分类号: B82B3/00
- IPC分类号: B82B3/00 ; C01B31/02 ; C23C14/14 ; C23C16/02 ; C23C16/26 ; C30B25/00 ; H01J9/02 ; B05D1/36 ; C23D8/00 ; C23C16/00 ; C23C28/00 ; C25D5/12
摘要:
Carbon nanotubes are directly grown on a substrate surface having three metal layers thereon by a thermal chemical vapor deposition at low-temperature, which can be used as an electron emission source for field emission displays. The three layers include a layer of an active metal catalyst sandwiched between a thick metal support layer formed on the substrate and a bonding metal layer. The active metal catalyst is iron, cobalt, nickel or an alloy thereof; the metal support and the bonding metal independently are Au, Ag, Cu, Pd, Pt or an alloy thereof; and they can be formed by sputtering, chemical vapor deposition, physical vapor deposition, screen printing or electroplating.