发明授权
- 专利标题： Method for forming tri-gate FinFET with mesa isolation
- 专利标题（中）： 用于形成台栅隔离的三栅极FinFET的方法
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申请号： US10633503申请日： 2003-08-05
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公开(公告)号： US06855583B1公开(公告)日： 2005-02-15
- 发明人: Zoran Krivokapic , Judy Xilin An , Bin Yu
- 申请人： Zoran Krivokapic , Judy Xilin An , Bin Yu
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Harrity & Snyder, LLP
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/786 ; H01L21/00
摘要：
A method forming a tri-gate fin field effect transistor includes forming an oxide layer over a silicon-on-insulator wafer comprising a silicon layer, and etching the silicon and oxide layers using a rectangular mask to form a mesa. The method further includes etching a portion of the mesa using a second mask to form a fin, forming a gate dielectric layer over the fin, and forming a tri-gate over the fin and the gate dielectric layer.
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