Invention Grant
- Patent Title: Semiconductor radiation imaging device including threshold circuitry
- Patent Title (中): 半导体辐射成像装置包括阈值电路
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Application No.: US08871199Application Date: 1997-06-09
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Publication No.: US06856350B2Publication Date: 2005-02-15
- Inventor: Risto Olavi Orava , Jouni Ilari Pyyhtia , Tom Gunnar Schulman , Miltiadis Evangelos Sarakinos , Konstantinos Evangelos Spartiotis
- Applicant: Risto Olavi Orava , Jouni Ilari Pyyhtia , Tom Gunnar Schulman , Miltiadis Evangelos Sarakinos , Konstantinos Evangelos Spartiotis
- Applicant Address: FI Espoo
- Assignee: Simage Oy
- Current Assignee: Simage Oy
- Current Assignee Address: FI Espoo
- Agency: Kenyon & Kenyon
- Priority: GB9410973 19940601; GB9421289 19941021; GB9502419 19950208; GB9508294 19950424
- Main IPC: H01L27/14
- IPC: H01L27/14 ; G01T1/24 ; G01T1/29 ; H01L27/146 ; H01L27/148 ; H04N5/32 ; H04N5/325 ; H04N5/335 ; H01L27/00

Abstract:
A semiconductor radiation imaging device includes an array of pixel cells having an array of pixel detectors which directly generate charge in response to incident radiation and a corresponding array of individually-addressable pixel circuits. Each pixel circuit is associated with a respective pixel detector for accumulating charge directly resulting from radiation incident on the pixel detector and includes threshold circuitry and charge accumulation circuitry. The threshold circuitry is configured to discard radiation hits on the pixel detector outside a predetermined threshold range, and the charge accumulation circuit is configured to accumulate charge directly resulting from a plurality of successive radiation hits on the respective pixel detector within the predetermined threshold range.
Public/Granted literature
- US20010001562A1 IMAGING DEVICES SYSTEM AND METHOD Public/Granted day:2001-05-24
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