发明授权
US06859748B1 Test structure for measuring effect of trench isolation on oxide in a memory device
有权
沟槽隔离对存储器件中氧化物的影响的测试结构
- 专利标题： Test structure for measuring effect of trench isolation on oxide in a memory device
- 专利标题（中）： 沟槽隔离对存储器件中氧化物的影响的测试结构
-
申请号： US10190420申请日： 2002-07-03
-
公开(公告)号： US06859748B1公开(公告)日： 2005-02-22
- 发明人: Nian Yang , Zhigang Wang , Tien-Chun Yang
- 申请人： Nian Yang , Zhigang Wang , Tien-Chun Yang
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L23/544
- IPC分类号： H01L23/544 ; G01R27/29 ; G01S31/00
摘要：
An apparatus for measuring effects of isolation processes (280) on an oxide layer (286) in a memory device (255) is described. In one embodiment, the apparatus comprises a structure (110) comprised of an array (110c) of memory devices (255). A testing unit (120) is coupled with the structure (110). The testing unit (120) is for performing various electrical tests on the array (110c) of memory devices (255). The testing unit (120) is also for providing data regarding each memory device (255) in the array (110c) of memory devices (255). An analyzer (120) is coupled with the structure (110) for analyzing results of the various electrical tests. This determines the condition of the oxide layer (286) of each memory device (255) in the array of memory devices (110c).
信息查询
IPC分类:
