发明授权
- 专利标题： Negative resist material and pattern formation method using the same
- 专利标题（中）： 负电阻材料和使用其的图案形成方法
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申请号： US10351097申请日： 2003-01-23
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公开(公告)号： US06861198B2公开(公告)日： 2005-03-01
- 发明人: Takanobu Takeda , Osamu Watanabe , Wataru Kusaki , Ryuji Koitabashi
- 申请人： Takanobu Takeda , Osamu Watanabe , Wataru Kusaki , Ryuji Koitabashi
- 申请人地址： JP Tokyo
- 专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Hogan & Hartson, LLP
- 优先权： JP2000-032380 20020208
- 主分类号： C08F12/22
- IPC分类号： C08F12/22 ; C08F20/12 ; C08F32/08 ; G03F7/004 ; G03F7/033 ; G03F7/038 ; H01L21/027 ; G03C1/72 ; C03F7/033
摘要：
A negative resist material, which comprises at least a high polymer containing repeating units represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 500,000. There is provided a negative resist material, in particular, a negative resist material of chemical amplification type, which shows high sensitivity, resolution, exposure latitude and process adaptability as well as good pattern shape after light exposure, and further shows superior etching resistance.