发明授权
- 专利标题： Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus
- 专利标题（中）： 半导体装置及其制造方法以及半导体制造装置
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申请号： US10293873申请日： 2002-11-13
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公开(公告)号： US06861328B2公开(公告)日： 2005-03-01
- 发明人: Akito Hara , Fumiyo Takeuchi , Kenichi Yoshino , Nobuo Sasaki
- 申请人： Akito Hara , Fumiyo Takeuchi , Kenichi Yoshino , Nobuo Sasaki
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Greer, Burns & Crain, Ltd
- 优先权： JP2000-255646 20000825; JP2001-202730 20010703
- 主分类号： G02F1/1345
- IPC分类号： G02F1/1345 ; G02F1/136 ; H01L21/20 ; H01L21/268 ; H01L21/336 ; H01L29/786 ; H01L21/00
摘要：
An a-Si film is patterned into a linear shape (ribbon shape) or island shape on a glass substrate. The upper surface of the a-Si film or the lower surface of the glass substrate is irradiated and scanned with an energy beam output continuously along the time axis from a CW laser in a direction indicated by an arrow, thereby crystallizing the a-Si film. This implements a TFT in which the transistor characteristics of the TFT are made uniform at high level, and the mobility is high particularly in a peripheral circuit region to enable high-speed driving in applications to a system-on glass and the like.
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