Invention Grant
- Patent Title: Semiconductor device with bump electrodes
- Patent Title (中): 具有凸起电极的半导体器件
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Application No.: US10247553Application Date: 2002-09-20
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Publication No.: US06861749B2Publication Date: 2005-03-01
- Inventor: Chia-Hui Wu , Biing-Seng Wu , Ying-Chou Tu
- Applicant: Chia-Hui Wu , Biing-Seng Wu , Ying-Chou Tu
- Applicant Address: TW Tainan
- Assignee: Himax Technologies, Inc.
- Current Assignee: Himax Technologies, Inc.
- Current Assignee Address: TW Tainan
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunnner. L.L.P.
- Main IPC: H01L21/60
- IPC: H01L21/60 ; H01L23/485 ; H01L23/48
Abstract:
A semiconductor device comprises a substrate having contact pads each covered by under bump metallurgy and a plurality of bump electrodes respectively provided on the under bump metallurgy covering the contact pads. According to one embodiment of the present invention, the semiconductor device is characterized by having at least one contact pad (e.g., a test contact pad) which is not provided with any bump electrode but still has under bump metallurgy provided thereon. According to another embodiment of the present invention, the semiconductor device is characterized by having at least a conductive line formed of the same material as the under bump metallurgy for interconnecting at least two of the contact pads. The present invention further provides methods of manufacturing the semiconductor devices.
Public/Granted literature
- US20040056351A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2004-03-25
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