发明授权
- 专利标题: Memory system with reduced refresh current
- 专利标题(中): 内存系统刷新电流降低
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申请号: US10672244申请日: 2003-09-25
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公开(公告)号: US06862238B1公开(公告)日: 2005-03-01
- 发明人: Joo-Sang Lee
- 申请人: Joo-Sang Lee
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Dicke, Billig & Czaja, PLLC
- 主分类号: G11C11/406
- IPC分类号: G11C11/406 ; G11C7/00
摘要:
The present invention is a random access memory device with reduced refresh current and method for use in the same. The memory device includes a memory array with a plurality of memory cells. The memory cells are configured to hold a charge. A command block is coupled to the memory bank and is configured to receive refresh commands that are used to periodically refresh the memory cells. A detection circuit is coupled to the command block and to the memory array. The detection circuit is configured to store a hit detect signal when the memory array is accessed. The detection circuit also receives the refresh command. The detections circuit enables block select signals only when the hit detect signal is stored while the refresh command is received.