发明授权
- 专利标题: Negative-working photoresist composition
- 专利标题(中): 负性光刻胶组合物
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申请号: US10053622申请日: 2002-01-24
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公开(公告)号: US06864036B2公开(公告)日: 2005-03-08
- 发明人: Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
- 申请人: Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
- 申请人地址: JP Kanagawa-ken
- 专利权人: Tokyo Ohka Kogyo Co., Ltd.
- 当前专利权人: Tokyo Ohka Kogyo Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Wenderoth, Lind & Ponack, LLP
- 优先权: JP11-234688 19990820
- 主分类号: G03F7/004
- IPC分类号: G03F7/004 ; G03F7/038
摘要:
Disclosed is a novel negative-working chemical-amplification photoresist composition comprising (A) an alkali-soluble resin, (B) an acid-generating agent and (C) a crosslinking agent, of which the component (B) is an onium salt compound selected from the group consisting of iodonium salt compounds and sulfonium salt compounds, having a specific fluoroalkyl sulfonate ion as the anionic moiety and the component (C) is a specific ethyleneurea compound substituted for at least one nitrogen atom by a hydroxymethyl or alkoxymethyl group. The photoresist composition is particularly suitable for the formation of a photoresist layer on a substrate surface provided with an undercoating of a water-insoluble organic anti-reflection film exhibiting excellent pattern resolution and orthogonal cross sectional profile of the patterned resist layer with a good temperature latitude in the post-exposure baking treatment for latent image formation.
公开/授权文献
- US20020061467A1 Negative-working photoresist composition 公开/授权日:2002-05-23