发明授权
US06864180B2 Method for reworking low-k polymers used in semiconductor structures
失效
用于半导体结构中使用的低k聚合物的再加工方法
- 专利标题: Method for reworking low-k polymers used in semiconductor structures
- 专利标题(中): 用于半导体结构中使用的低k聚合物的再加工方法
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申请号: US09969363申请日: 2001-10-02
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公开(公告)号: US06864180B2公开(公告)日: 2005-03-08
- 发明人: Darryl D. Restaino , Delores Bennett , John A. Fitzsimmons , John Fritche , Jeffrey C. Hedrick , Chih-Chien Liu , Shahab Siddiqui , Christy S. Tyberg
- 申请人: Darryl D. Restaino , Delores Bennett , John A. Fitzsimmons , John Fritche , Jeffrey C. Hedrick , Chih-Chien Liu , Shahab Siddiqui , Christy S. Tyberg
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Cantor Colburn LLP
- 主分类号: H01L21/311
- IPC分类号: H01L21/311
摘要:
A method for removing a dielectric layer formed upon a semiconductor substrate is disclosed. In an exemplary embodiment of the invention, the method includes subjecting the dielectric layer to a dry etch process and subjecting an adhesion promoter layer underneath the dielectric layer to a wet etch process.