发明授权
- 专利标题： System for high-precision double-diffused MOS transistors
- 专利标题（中）： 高精度双扩散MOS晶体管系统
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申请号： US10326214申请日： 2002-12-19
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公开(公告)号： US06867100B2公开(公告)日： 2005-03-15
- 发明人: Henry L. Edwards , Sameer Pendharkar , Joe Trogolo , Tathagata Chatterjee , Taylor Efland
- 申请人： Henry L. Edwards , Sameer Pendharkar , Joe Trogolo , Tathagata Chatterjee , Taylor Efland
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Peter K. McLarty; W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/10 ; H01L29/423 ; H01L29/78 ; H01L21/336
摘要：
The present invention provides a system for efficiently producing versatile, high-precision MOS device structures in which straight regions dominate the device's behavior, providing minimum geometry devices that precisely match large devices, in an easy, efficient and cost-effective manner. The present invention provides methods and apparatus for producing double diffused semiconductor devices that minimize performance impacts of end cap regions. The present invention provides a MOS structure having a moat region (404, 516, 616), and an oxide region (414, 512, 608) overlapping the moat region. A double-diffusion region (402, 504, 618) is formed within the oxide region, having end cap regions (406, 502, 620) that are effectively deactivated utilizing geometric and implant manipulations.
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