发明授权
US06867658B1 Enhanced architectures of voltage-controlled oscillators with single inductor (VCO-1L)
有权
具有单电感(VCO-1L)的压控振荡器的增强架构
- 专利标题: Enhanced architectures of voltage-controlled oscillators with single inductor (VCO-1L)
- 专利标题(中): 具有单电感(VCO-1L)的压控振荡器的增强架构
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申请号: US10618535申请日: 2003-07-11
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公开(公告)号: US06867658B1公开(公告)日: 2005-03-15
- 发明人: Andreas Sibrai , Nikolay Tchamov
- 申请人: Andreas Sibrai , Nikolay Tchamov
- 申请人地址: DE Kirchheims-Nabern
- 专利权人: Dialog Semiconductor GmbH
- 当前专利权人: Dialog Semiconductor GmbH
- 当前专利权人地址: DE Kirchheims-Nabern
- 代理商 George D. Saile; Stephen B. Ackerman
- 优先权: EP03368069 20030707
- 主分类号: H03B5/12
- IPC分类号: H03B5/12 ; H03B5/04
摘要:
Five circuit topologies of Voltage-Controlled Oscillators with Single Inductor (VCO-1L) are proposed. They offer lower power consumption, higher output amplitude, broader tuning range, cleaner s-rum and higher frequency stability seen as lower phase-noise. Most of the achievements are based on the development of active pull-down control circuitries of the timing and active charge dissipation in the transistors. The applications of the present invention are of critical importance for wireless communication systems not allowing any limitations in the frequency range. Among them are base stations and mobile terminals mobile phones, GSM, PCS/DCS, W-CDMA etc., as well BlueTooth, Wireless LAN, Automotive and ISM band etc. The advanced performance of the circuits is based on important architectural specifics and proven by simulation on advanced CMOS process. The architectures are not limited to use on CMOS; they can be efficiently used in any semiconductor process where complimentary polarity transistors are available, for example BiCMOS, SiGe/BiCMOS, GaAs etc.
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