An electron-beam focusing apparatus for controlling a path of electron beams emitted from an electron-beam emitter in an electron-beam projection lithography (EPL) system includes top and bottom magnets for creating a magnetic field within a vacuum chamber, the top and bottom magnets disposed above and below the vacuum chamber into which a wafer is loaded, respectively; upper and lower pole pieces magnetically contacting the top and bottom magnets, respectively, the upper and lower pole pieces penetrating a top wall and a bottom wall of the vacuum chamber, respectively; and upper and lower projections having a circular shape, extending outwardly from facing surfaces of the upper and lower pole pieces, respectively.