发明授权
- 专利标题： Reduction resistant thermistor, method of production thereof, and temperature sensor
- 专利标题（中）： 耐还原热敏电阻，其制造方法和温度传感器
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申请号： US09925017申请日： 2001-08-09
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公开(公告)号： US06878304B2公开(公告)日： 2005-04-12
- 发明人: Itsuhei Ogata , Daisuke Makino , Kaoru Kuzuoka , Atsushi Kurano
- 申请人： Itsuhei Ogata , Daisuke Makino , Kaoru Kuzuoka , Atsushi Kurano
- 申请人地址： JP Aichi JP Kariya
- 专利权人： Nippon Soken Inc.,Denso Corporation
- 当前专利权人： Nippon Soken Inc.,Denso Corporation
- 当前专利权人地址： JP Aichi JP Kariya
- 代理机构： Nixon & Vanderhye P.C.
- 优先权： JP2000-242119 20000810; JP2001-204217 20010705
- 主分类号： H01C7/02
- IPC分类号： H01C7/02 ; H01C7/04 ; H01C7/10 ; B28B1/00 ; H01C7/13
摘要：
A highly accurate reduction resistant thermistor exhibiting stable resistance characteristics even under conditions where the inside of a metal case of a temperature sensor becomes a reducing atmosphere, wherein when producing the thermistor comprised of a mixed sintered body (M1 M2)O3.AOx, the mean particle size of the thermistor material containing the metal oxide, obtained by heat treating, mixing, and pulverizing the starting materials, is made smaller than 1.0 μm and the sintered particle size of the mixed sintered body, obtained by shaping and firing this thermistor material, is made 3 μm to 20 μm so as to reduce the grain boundaries where migration of oxygen occurs, suppress migration of oxygen, and improve the reduction resistance.
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