发明授权
- 专利标题： Method of fabricating barrierless and embedded copper damascene interconnects
- 专利标题（中）： 制造无障碍和嵌入铜大马士革互连的方法
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申请号： US10346382申请日： 2003-01-17
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公开(公告)号： US06878621B2公开(公告)日： 2005-04-12
- 发明人: Zhen-Cheng Wu , Lain-Jong Li , Yung-Chen Lu , Syun-Ming Jang
- 申请人： Zhen-Cheng Wu , Lain-Jong Li , Yung-Chen Lu , Syun-Ming Jang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/44 ; H01L21/4763
摘要：
A method for forming at least one barrierless, embedded metal structure comprising the following steps. A structure having a patterned dielectric layer formed thereover with at least one opening exposing at least one respective portion of the structure. Respective metal structures are formed within each respective opening. The first dielectric layer is removed to expose the top and at least a portion of the side walls of the respective at least one metal structure. A dielectric barrier layer is formed over the structure and the exposed top of the respective metal structure. A second, conformal dielectric layer is formed over the dielectric barrier layer to complete the respective barrierless at least one metal structure embedded within the second, conformal dielectric layer. The dielectric barrier layer preventing diffusion of the metal comprising the respective at least one metal structure into the second, conformal dielectric layer.
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