发明授权
- 专利标题： Systems and methods to determine seed layer thickness of trench sidewalls
- 专利标题（中）： 确定沟槽侧壁种子层厚度的系统和方法
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申请号： US10050454申请日： 2002-01-16
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公开(公告)号： US06879051B1公开(公告)日： 2005-04-12
- 发明人: Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Ramkumar Subramanian
- 申请人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Ramkumar Subramanian
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Amin & Turocy, LLP
- 主分类号： C23C16/04
- IPC分类号： C23C16/04 ; C23C16/52 ; H01L21/31
摘要：
One aspect of the present invention relates to a method to facilitate formation of seed layer portions on sidewall surfaces of a trench formed in a substrate. The method involves the steps of forming a conformal seed layer over a barrier layer disposed conformal to a trench, wherein the trench is formed in the substrate; reflecting a light beam of x-ray radiation at the seed layer sidewall portions; generating a measurement signal based on the reflected portion of the light beam; and determining a thickness of the sidewall portions based on the measurement signal while the sidewall portions are being formed over the trench.