发明授权
US06887790B1 Method of forming dummy copper plug to improve low k structure mechanical strength and plug fill uniformity
有权
形成假铜塞以改善低k结构机械强度和塞填充均匀性的方法
- 专利标题: Method of forming dummy copper plug to improve low k structure mechanical strength and plug fill uniformity
- 专利标题(中): 形成假铜塞以改善低k结构机械强度和塞填充均匀性的方法
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申请号: US10199856申请日: 2002-07-19
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公开(公告)号: US06887790B1公开(公告)日: 2005-05-03
- 发明人: Tien-I Bao , Bi-Trong Chen , Ying-Ho Chen
- 申请人: Tien-I Bao , Bi-Trong Chen , Ying-Ho Chen
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: H01L21/44
- IPC分类号: H01L21/44 ; H01L21/768 ; H01L23/522
摘要:
A new method is provided for the creation of dummy plugs in support of creating a robust structure of overlying interconnect traces. A pattern of holes for dummy plugs is etched stopping at an etch stop layer, the etch stop layer is then removed from the bottom of the holes that have been created whereby this removal is extended into an underlying layer of insulating material. The pattern of holes is filled with a metal, preferably copper, excess metal is removed by methods of Chemical Mechanical Polishing, leaving in place a pattern of metal plugs that penetrate through layers of insulation material and through layers of etch stop material and into an underlying layer of semiconductor material.
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