发明授权
US06887790B1 Method of forming dummy copper plug to improve low k structure mechanical strength and plug fill uniformity 有权
形成假铜塞以改善低k结构机械强度和塞填充均匀性的方法

Method of forming dummy copper plug to improve low k structure mechanical strength and plug fill uniformity
摘要:
A new method is provided for the creation of dummy plugs in support of creating a robust structure of overlying interconnect traces. A pattern of holes for dummy plugs is etched stopping at an etch stop layer, the etch stop layer is then removed from the bottom of the holes that have been created whereby this removal is extended into an underlying layer of insulating material. The pattern of holes is filled with a metal, preferably copper, excess metal is removed by methods of Chemical Mechanical Polishing, leaving in place a pattern of metal plugs that penetrate through layers of insulation material and through layers of etch stop material and into an underlying layer of semiconductor material.
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