发明授权
- 专利标题： Semiconductor power device with shear stress compensation
- 专利标题（中）： 具有剪切应力补偿的半导体功率器件
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申请号： US10447457申请日： 2003-05-29
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公开(公告)号： US06888246B2公开(公告)日： 2005-05-03
- 发明人: Lei L. Mercado , Vijay Sarihan , Young Sir Chung , James Jen-Ho Wang , Edward R. Prack
- 申请人： Lei L. Mercado , Vijay Sarihan , Young Sir Chung , James Jen-Ho Wang , Edward R. Prack
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Robert L. King
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L21/768 ; H01L23/31 ; H01L23/485 ; H01L23/532 ; H01L23/48 ; H01L23/52
摘要：
In accordance with one embodiment, a stress buffer (40) is formed between a power metal structure (90) and passivation layer (30). The stress buffer (40) reduces the effects of stress imparted upon the passivation layer (30) by the power metal structure (90). In accordance with an alternative embodiment, a power metal structure (130A) is partitioned into segments (1091), whereby electrical continuity is maintained between the segments (1090) by remaining portions of a seed layer (1052) and adhesion/barrier layer (1050). The individual segments (1090) impart a lower peak stress than a comparably sized continuous power metal structure (9).
公开/授权文献
- US20030232493A1 Semiconductor power device and method of formation 公开/授权日：2003-12-18
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